Electrical isolation of GaN by MeV ion irradiation

Implant isolation of ZnO

We study ion-irradiation-induced electrical isolation in n-type single-crystal ZnO epilayers. Emphasis is given to improving the thermal stability of isolation and obtaining a better understanding of the isolation mechanism. Results show that an increase in the dose of 2 MeV O ions ~up to ;2 orders of magnitude above the threshold isolation dose! and irradiation temperature ~up to 350 °C) has a...

Effect of irradiation temperature and ion flux on electrical isolation of GaN

Electrical isolation of p-type GaAs layers by ion irradiation

Electrical isolation of n- and p- In 0.53 Ga 0.47 As epilayers using ion irradiation

AIR FORCE INSTITUTE OF TECHNOLOGY Wright-Patterson Air Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED ELECTRON PARAMAGNETIC RESONANCE SPECTROSCOPY AND HALL EFFECT STUDIES OF THE EFFECTS OF LOW ENERGY ELECTRON IRRADIATION ON GALLIUM NITRIDE (GAN)

Irradiation effects on the wide-bandgap semiconductor material GaN are of interest to the USAF due to this material’s applicability for a wide range of on-orbit uses. Irradiation is also a valuable tool in analyzing the damage and defect formation dynamics of the material which is of great use in determining and correcting deficiencies in material growth processes. GaN samples representing seve...